sot-523 plastic-encapsulate mosfets n-channel mosfet features z low on-resistance z fast s witching speed z low v oltage d rive makes this device ideal for portable equipment z easily designed d rive circuits easy to parallel marking: kn equivalent circuit mosfet maximum ratings (t a = 25c unless otherwise noted) symbol parameter value units v ds drain-source voltage 30 v v gss gate-source voltage 20 v i d continuous drain current 0.1 a p d power dissipation 0.15 w t j junction temperature 150 t stg storage temperature -55~+ 150 mosfet electrical characteristics (t a=25 unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage v ds v gs = 0v, i d = 10a 30 v zero gate voltage drain current i dss v ds =30v,v gs = 0v 1 a gate Csource leakage current i gss v gs = 20 v, v ds = 0v 1 a gate threshold voltage v gs(th) v ds = 3v, i d =100a 0.8 1.5 v v gs = 4v, i d =10ma 8 ? drain-source on-resistance r ds(on) v gs =2.5v,i d =1ma 13 ? forward transconductance g fs v ds =3v, i d = 10ma 20 ms dynamic characteristics * input capacitance c iss 13 pf output capacitance c oss 9 pf reverse transfer capacitance c rss v ds =5v,v gs =0v,f =1mhz 4 pf switching characteristics * turn-on delay time t d(on) 15 ns rise time t r 35 ns turn-off delay time t d(off) 80 ns fall time t f v gs =5v, v dd =5v, i d =10ma, rg =10 ? , r l =500 ? , 80 ns sot-523 1. gate 2. source 3. drain r ja thermal resistance, junction-to-ambient 833 /w * these parameters have no way to verify. 1 2012-0 willas electronic corp. 2sk3019t t1 z z
0481 21 62 0 0 3 6 9 12 15 01234 1 10 100 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 012345 0 40 80 120 160 200 1 10 100 1 10 i d =50ma i d =100ma i d r ds(on) t a =25 pulsed v gs r ds(on) on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =25 pulsed 200 3 30 v ds =3v t a =25 pulsed transfer characteristics drain current i d (ma) gate to source voltage v gs (v) 200 30 t a =25 pulsed 3 0.3 v sd i s source current i s (ma) source to drain voltage v sd (v) 4.0v 3.5v 3.0v typical characteristics v gs =1.5v 2.5v 2.0v output characteristics drain current i d (ma) drain to source voltage v ds (v) 200 30 3 30 3 50 v gs =2.5v v gs =4v t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (ma) 2012-0 willas electronic corp. sot-523 plastic-encapsulate mosfets 2n7002t z z 2sk3019t t1
outline drawing dimensions in inches and (millimeters) sot-523 rev.d .043(1.10) .035(0.90) .069(1.75) .057(1.45) .004(0.10)min. .008(0.20) .004(0.10) .035(0.90) .028(0.70) .006(0.15) .014(0.35) .004(0.10)max. .067(1.70) .059(1.50) .035(0.90) .028(0.70) .01 4 (0.3 5 ) .010(0.25) 2012-0 willas electronic corp. sot-523 plastic-encapsulate mosfets 2sk3019t t1
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